28N foundry reticle requal challenges and solutions for IC fabs

Mike Yeh; David Wu; Bo Mu; Bryan Reese

doi:10.1117/12.867258

24 September 2010 28N foundry reticle requal challenges and solutions for IC fabs

Mike Yeh, David Wu, Bo Mu, Bryan Reese

Proceedings Volume 7823, Photomask Technology 2010; 782338 (2010) https://doi.org/10.1117/12.867258
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

Most leading-edge IC fabs continue to use direct reticle inspection for "early warning" detection of haze defects before they print on wafers. This inspection strategy enables fabs to cost-effectively maintain the highest product yields possible. As design rules advance from 45/40 nm nodes to 32/28 nm, mask pattern sizes continue to shrink while increasing in pattern density. More layers are exposed on 193nm immersion scanners, and as a result, reticle requal inspection requirements become more challenging in order to meet sensitivity and inspectibility performance. In this paper, we examine some of the inspection challenges 32/28 nm logic mask designs present. New reticle requal requirements created by aggressive SRAF and higher MEEF mask designs used at these nodes are first examined. A new and improved inspection technology to support requal requirements at this level is introduced and tested. These data are analyzed to evaluate the overall inspection capability and sensitivity of this new product designed to meet 32/28 nm foundry reticle requal needs for high-volume production in IC fabs.

Citation Download Citation

Mike Yeh, David Wu, Bo Mu, and Bryan Reese "28N foundry reticle requal challenges and solutions for IC fabs", Proc. SPIE 7823, Photomask Technology 2010, 782338 (24 September 2010); https://doi.org/10.1117/12.867258

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