Paper
10 February 2011 High power optically pumped VECSELs emitting in 1310-nm and 1550-nm bands
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Abstract
1300-nm, 1550-nm and 1480-nm wavelength, optically-pumped VECSELs based on wafer-fused InAlGaAs/InPAlGaAs/ GaAs gain mirrors with intra-cavity diamond heat-spreaders demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with5 groups of quantum wells show CW output power of 2.7 W from 180μm apertures in both 1300-nm and 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These devices emit a high quality beam with M² beam parameter below 1.6 allowing reaching a coupling efficiency into a single mode fiber as high as 70 %. Maximum value of output power of 6.6 W was reached for 1300nm wavelength devices with 290μm aperture size.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sirbu, A. Mereuta, A. Caliman, N. Volet, Q. Zhu, V. Iakovlev, J. Rautiainen, J. Lyytikainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and E. Kapon "High power optically pumped VECSELs emitting in 1310-nm and 1550-nm bands", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 791903 (10 February 2011); https://doi.org/10.1117/12.874838
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Cited by 8 scholarly publications.
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KEYWORDS
Mirrors

Quantum wells

Diamond

Semiconducting wafers

Gallium arsenide

Optical pumping

Oxygen

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