New three-dimensional AFM for CD measurement and sidewall characterization

Yueming Hua; Cynthia Buenviaje-Coggins; Yong-ha Lee; Jung-min Lee; Kyung-deuk Ryang; Sang-il Park

doi:10.1117/12.879545

20 April 2011 New three-dimensional AFM for CD measurement and sidewall characterization

Yueming Hua, Cynthia Buenviaje-Coggins, Yong-ha Lee, Jung-min Lee, Kyung-deuk Ryang, Sang-il Park

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 797118 (2011) https://doi.org/10.1117/12.879545
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

As the feature size in the lithography process continuously shrinks, accurate critical dimension (CD) measurement becomes more important. A new 3-dimensional (3D) metrology atomic force microscope (AFM) has been designed on a decoupled XY and Z scanner platform for CD and sidewall characterization. In this decoupled scanner configuration, the sample XY scanner moves the sample and is independent from the Z scanner which only moves the tip. The independent Z scanner allows the tip to be intentionally tilted to easily access the sidewall. This technique has been used to measure photoresist line patterns. The tilted scanner design allows CD measurement at the top, middle, and bottom of lines as well as roughness measurement along the sidewall. The method builds upon the standard AFM tip design resulting in a technique that a) maintains the same resolution as traditional AFM, b) can be used with sharpened tips for increased image resolution, and c) does not suffer from corner inaccessibility from large radius of curvature tips.

Citation Download Citation

Yueming Hua, Cynthia Buenviaje-Coggins, Yong-ha Lee, Jung-min Lee, Kyung-deuk Ryang, and Sang-il Park "New three-dimensional AFM for CD measurement and sidewall characterization", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797118 (20 April 2011); https://doi.org/10.1117/12.879545

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