Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Guillaume Landie; Yongan Xu; Sean Burns; Kenji Yoshimoto; Martin Burkhardt; Larry Zhuang; Karen Petrillo; Jason Meiring; Dario Goldfarb; Martin Glodde; Anthony Scaduto; Matthew Colburn; Jason Desisto; Young Bae; Michael Reilly; Cecily Andes; Vaishali Vohra

doi:10.1117/12.882843

15 April 2011 Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)

Guillaume Landie, Yongan Xu, Sean Burns, Kenji Yoshimoto, Martin Burkhardt, Larry Zhuang, Karen Petrillo, Jason Meiring, Dario Goldfarb, Martin Glodde, Anthony Scaduto, Matthew Colburn, Jason Desisto, Young Bae, Michael Reilly, Cecily Andes, Vaishali Vohra

Author Affiliations +

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 797206 (2011) https://doi.org/10.1117/12.882843
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

In this work, we investigate the Negative Tone Develop (NTD) process from a fundamental materials/process interaction perspective. Several key differences exist between a negative tone develop process and a traditional positive tone develop system. For example, the organic solvent dissolves the unexposed material, while the deprotected resist remains intact. This causes key differences in key patterning properties, such as pattern collapse, adhesion, remaining resist, and photoresist etch selectivity. We have carried out fundamental studies to understand these new interactions between developer and remaining resist with negative tone develop systems. We have characterized the dynamic dissolution behavior of a model system with a quartz crystal microbalance with both positive and negative tone solvent developers. We have also compared contrast curves, and a fundamental model of image collapse. In addition, we present first results on Optical Proximity Correction (OPC) modeling results of current Negative Tone Develop (NTD) resist/developer systems.

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Guillaume Landie, Yongan Xu, Sean Burns, Kenji Yoshimoto, Martin Burkhardt, Larry Zhuang, Karen Petrillo, Jason Meiring, Dario Goldfarb, Martin Glodde, Anthony Scaduto, Matthew Colburn, Jason Desisto, Young Bae, Michael Reilly, Cecily Andes, and Vaishali Vohra "Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797206 (15 April 2011); https://doi.org/10.1117/12.882843

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