Performance of EUV molecular resists based on fullerene derivatives

Hiroaki Oizumi; Kentaro Matsunaga; Koji Kaneyama; Julius Joseph Santillan; Gousuke Shiraishi; Toshiro Itani

doi:10.1117/12.879302

15 April 2011 Performance of EUV molecular resists based on fullerene derivatives

Hiroaki Oizumi, Kentaro Matsunaga, Koji Kaneyama, Julius Joseph Santillan, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 797209 (2011) https://doi.org/10.1117/12.879302
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).

Citation Download Citation

Hiroaki Oizumi, Kentaro Matsunaga, Koji Kaneyama, Julius Joseph Santillan, Gousuke Shiraishi, and Toshiro Itani "Performance of EUV molecular resists based on fullerene derivatives", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797209 (15 April 2011); https://doi.org/10.1117/12.879302

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