Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven J. Holmes; Cherry Tang; Sean Burns; Yunpeng Yin; Rex Chen; Chiew-seng Koay; Sumanth Kini; Hideyuki Tomizawa; Shyng-Tsong Chen; Nicolette Fender; Brian Osborn; Lovejeet Singh; Karen Petrillo; Guillaume Landie; Scott Halle; Sen Liu; John C. Arnold; Terry Spooner; Rao Varanasi; Mark Slezak; Matthew Colburn

doi:10.1117/12.881489

15 April 2011 Optimization of pitch-split double patterning photoresist for applications at the 16nm node

Steven J. Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John C. Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn

Author Affiliations +

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79720G (2011) https://doi.org/10.1117/12.881489
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.

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Steven J. Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John C. Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, and Matthew Colburn "Optimization of pitch-split double patterning photoresist for applications at the 16nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720G (15 April 2011); https://doi.org/10.1117/12.881489

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