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Directed self-assembly (DSA) of block copolymers has gained significant attention in recent years as a possible
alternative for large area fabrication of future sub-30 nm lithographic patterns. To achieve this patterning, at least three
critical pieces are needed: (1) a block copolymer with sufficient immiscibility of the two blocks to drive phase separation
at the low molecular weights required to achieve such small phase domains, (2) a method for selectively removing one
of the blocks after phase separation to achieve formation of a relief pattern, and (3) a method for producing the templated
surfaces used to guide and register the phase separated patterns on the substrate of interest. Current methods for
achieving the patterned substrate template, whether they are of chemoepitaxial or graphoepitaxial nature, are generally
complex involving a large number of steps that are not easily applied to a variety of different substrate surfaces. For
example, numerous substrates have been studied to provide neutral wettability to the styrene-methacrylate (PS-b-
PMMA) block copolymers, such as random styrene-methacrylate copolymer films (PS-r-PMMA) or self-assembled
monolayer (SAM) modified surfaces, which induce perpendicularly oriented morphologies for PS-b-PMMA self-assembly.
In the case of chemical epitaxy processes, a layer of photoresist is generally then coated on such neutral
substrate films and patterned to render commensurability to the periodicity of the PS-b-PMMA being used. The open
(i.e. space) regions in the resist are then exposed to alter their chemistry, e.g. soft X-ray or oxygen plasma exposures
have been used, to achieve hydrophilicity which should preferentially wet PMMA. Finally, the resist is stripped and the
block copolymer is coated and assembled on the template surface. Obviously such multi-step processes would not be
preferred if alternatives existed. As a step toward that goal of making DSA processes simpler, a photodefinable substrate
film that can be used for PS-b-PMMA self-assembly has been developed in this work that is coated, exposed, and baked
in a manner analogous to current optical photoresists. The polymer resin for this material is a form of protected
poly(hydroxystyrene) that is cross-linkable. The new material is suitable for DSA processes using both solvent and
thermal annealing methods. Results of PS-b-PMMA DSA on this new material will be discussed.
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