Growth mechanism and inhibition technologies of a contamination on the surface of photomask for longtime LCD-TFT lithography process

Makoto Murai; Masayoshi Tsuchiya; Hiroyuki Shinchi; Terumasa Hirano; Shintaro Kitajima; Yasushi Kaneko; Takahisa Kimoto; Shigeki Takayama

doi:10.1117/12.897698

22 April 2011 Growth mechanism and inhibition technologies of a contamination on the surface of photomask for longtime LCD-TFT lithography process

Makoto Murai, Masayoshi Tsuchiya, Hiroyuki Shinchi, Terumasa Hirano, Shintaro Kitajima, Yasushi Kaneko, Takahisa Kimoto, Shigeki Takayama

Author Affiliations +

Proceedings Volume 8081, Photomask and Next-Generation Lithography Mask Technology XVIII; 808105 (2011) https://doi.org/10.1117/12.897698
Event: Photomask and NGL Mask Technology XVIII, 2011, Yokohama, Japan

Abstract

Recently, the progressive contamination of photomasks has become a major concern for long-term LCD-TFT manufacturing, as it is the cause of significant defects. We have deciphered the chemical structure and growth mechanism of progressive contamination, and have devised an accelerated test procedure which simulates 2 years of TFT processes in order to determine how best to inhibit its growth (UG Series). By using the photomask with a new type of pellicle (UG series), we were able to inhibit the growth of progressive contamination to the extent that no contamination was confirmed on the photomask for approximately two years.

Citation Download Citation

Makoto Murai, Masayoshi Tsuchiya, Hiroyuki Shinchi, Terumasa Hirano, Shintaro Kitajima, Yasushi Kaneko, Takahisa Kimoto, and Shigeki Takayama "Growth mechanism and inhibition technologies of a contamination on the surface of photomask for longtime LCD-TFT lithography process", Proc. SPIE 8081, Photomask and Next-Generation Lithography Mask Technology XVIII, 808105 (22 April 2011); https://doi.org/10.1117/12.897698

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