Paper
13 March 2012 Pattern collapse mitigation strategies for EUV lithography
Dario L. Goldfarb, Robert L. Bruce, James J. Bucchignano, David P. Klaus, Michael A. Guillorn, Chunghsi J. Wu
Author Affiliations +
Abstract
In this study, a comprehensive approach towards assessing pattern collapse challenges and solutions for Extreme Ultraviolet Lithography (EUV) resists beyond the 14nm node is undertaken. The fundamental forces that drive pattern deformation are reassessed in order to propose a generalized design criterion for EUV photoresists and aqueous surfactanated rinses. Furthermore, ultimate pattern collapse solutions such as solvent drying utilizing pressurized fluids (supercritical CO2) are exemplified for sub-60nm pitch EUV patterning. In parallel, alternative EUV integration schemes that use a metal-based hardmask (MHM) are studied using a specifically tailored self-assembled monolayer (SAM) to prevent delamination-driven pattern collapse due to resist-hardmask interfacial adhesion failure. Finally, the marginal image transfer of 40nm pitched L/S of ultrathin EUV resist into a SiARC-underlayer stack appears to be gated by the EUV resist resolution limit and the reduced film thickness budget. An alternative method for achieving improved postetch line width roughness (LWR) with an ultrathin MHM-based integration scheme is herein demonstrated.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dario L. Goldfarb, Robert L. Bruce, James J. Bucchignano, David P. Klaus, Michael A. Guillorn, and Chunghsi J. Wu "Pattern collapse mitigation strategies for EUV lithography", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832205 (13 March 2012); https://doi.org/10.1117/12.915431
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Cited by 14 scholarly publications and 2 patents.
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KEYWORDS
Extreme ultraviolet

Etching

Line width roughness

Capillaries

Extreme ultraviolet lithography

Liquids

Optical lithography

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