Effects of out-of-band radiation on EUV resist performance

Koji Inukai; Shalini Sharma; Hiroki Nakagawa; Makoto Shimizu; Tooru Kimura

doi:10.1117/12.916596

22 March 2012 Effects of out-of-band radiation on EUV resist performance

Koji Inukai, Shalini Sharma, Hiroki Nakagawa, Makoto Shimizu, Tooru Kimura

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83220X (2012) https://doi.org/10.1117/12.916596
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography high volume manufacturing tools are expected to use laser produced plasma sources to generate EUV radiation necessary for resist exposure. EUV light from laser sources emit light over a wide spectral range or popularly known as out-of-band (OOB) radiation along with the desired wavelength. EUV resists are sensitive to both EUV and OOB radiation because a fair amount of the EUV photoresists are based on materials designed for 193 nm and 248 nm. Some of the detrimental effects of OOB radiation within the lithography process can be seen in the form of photoresist film thickness loss, which in turn results in profile degradation. Therefore development of EUV resists which are insensitive to OOB radiation is very important. We investigated EUV resist patterning performance and the effect of OOB radiation specifically in the DUV (193 nm and 248 nm) wavelength range. Resist materials with various DUV absorbance were prepared, and less OOB sensitive materials were found. Moreover, in this study effective top-coat type material for OOB reduction was developed and its effectiveness was confirmed by EUV exposure results.

Citation Download Citation

Koji Inukai, Shalini Sharma, Hiroki Nakagawa, Makoto Shimizu, and Tooru Kimura "Effects of out-of-band radiation on EUV resist performance", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220X (22 March 2012); https://doi.org/10.1117/12.916596

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