Paper
3 April 2012 Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM
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Abstract
The novel method of sub-nanometer accuracy (uncertainty) for the line width measurement and line edge detection using STEM (Scanning Transmission Electron Microscope) images is proposed to calibrate CD-SEM line width measurement and standardization of line edge detection. In accordance with the proposed method, the traceability and reference metrology are established using Si lattice structures and edge detection of Si line with metal coating. First, the interface of SiO2-Air is defined using image intensity of STEM dark field images after metal coating. Second, an image magnification is calculated using 2D Fourier analysis of the images. Third, the edge positions are detected. Using the proposed method, the expanded uncertainty (3 sigma) less than 0.3 nm for the line width of 50 nm is established.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Takamasu, Haruki Okitou, Satoru Takahashi, Mitsuru Konno, Osamu Inoue, and Hiroki Kawada "Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83240X (3 April 2012); https://doi.org/10.1117/12.916680
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Cited by 5 scholarly publications.
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KEYWORDS
Scanning transmission electron microscopy

Silicon

Metals

Edge detection

Coating

Interfaces

Scanning electron microscopy

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