CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification

Katsumi Ohmori; Naoto Motoike; Hidetami Yaegashi; Kenichi Oyama

doi:10.1117/12.916321

20 March 2012 CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification

Katsumi Ohmori, Naoto Motoike, Hidetami Yaegashi, Kenichi Oyama

Author Affiliations +

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83250C (2012) https://doi.org/10.1117/12.916321
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Double patterning techniques (DPT) with 193nm immersion lithography are being thought to be one of the most promising candidates for the 22nm node and beyond. Especially, self-aligned spacer double patterning (SADP) has already been established as pitch doubling process and adapted in high volume manufacturing of NAND flash memory device. Moreover, ultra fine resolution can be obtained to repeat the SADP step twice as pitch quadrupling. Simple cost effective SADP scheme which is resist core SADP process has already been demonstrated to obtain not only simple line and space patterning also trench and 2D patterning as well by Tokyo Electron LTD.[1, 2, 3] In this process, a SiO2 spacer film is being directly formed on a tri-layer resist stack. This pattern is then transferred onto an underlying spin-on carbon (SOC) film and the final pattern is resolved on the TEOS film. Roughness and verticalness of resist pattern could affect the quality of SiO2 spacer film deposition and it could determine the CD uniformity of final pattern. Therefore, it's been thought that low line-width roughness (LWR) resist pattern and vertical resist profile make a better CD contribution and uniformity on final pattern. Experimental results on SADP process will be shown and then it'll be discussed that specially designed resist materials which indicates small LWR and vertical profile could have a potential to improve CD uniformity after pitch splitting SADP process.

Citation Download Citation

Katsumi Ohmori, Naoto Motoike, Hidetami Yaegashi, and Kenichi Oyama "CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250C (20 March 2012); https://doi.org/10.1117/12.916321

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available