High aspect ratio etching using a fullerene derivative spin-on-carbon hardmask

A. Frommhold; J. Manyam; R. E. Palmer; A. P. G. Robinson

doi:10.1117/12.916426

16 March 2012 High aspect ratio etching using a fullerene derivative spin-on-carbon hardmask

A. Frommhold, J. Manyam, R. E. Palmer, A. P. G. Robinson

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 83280U (2012) https://doi.org/10.1117/12.916426
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

As lithographic resolution has increased to meet the demand for smaller devices it has been necessary to use extremely thin photoresist films to mitigate aspect ratio related resist feature collapse during development. Even with high etchdurability photoresists, usable photoresist thickness limits etch depth, and it is becoming increasingly difficult to transfer the pattern directly from the photoresist to the substrate. As feature sizes have diminished the use of multilayer etch stacks has been increasingly investigated to further increase aspect ratio. Typically, a thick layer of amorphous carbon is deposited by chemical vapor deposition, and then coated with thin silicon and resist layers. To improve manufacturability it would be beneficial to use spin-on-carbon in the bottom layer. Here we introduce a fullerene based spin-on carbon with high etch-durability. Sub 50 nm features with aspect ratios in excess of 15:1 have been produced in silicon using ICP etching.

Citation Download Citation

A. Frommhold, J. Manyam, R. E. Palmer, and A. P. G. Robinson "High aspect ratio etching using a fullerene derivative spin-on-carbon hardmask", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 83280U (16 March 2012); https://doi.org/10.1117/12.916426

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