NXE:3100 full wafer imaging performance and budget verification

Eelco van Setten; Koen van Ingen Schenau; Mark O'Mahony; Thijs Hollink; Friso Wittebrood; Natalia Davydova; Mark Eurlings; Kees Feenstra; Jo Finders; Mircea Dusa; Stuart Young

doi:10.1117/12.918495

16 April 2012 NXE:3100 full wafer imaging performance and budget verification

Eelco van Setten, Koen van Ingen Schenau, Mark O'Mahony, Thijs Hollink, Friso Wittebrood, Natalia Davydova, Mark Eurlings, Kees Feenstra, Jo Finders, Mircea Dusa, Stuart Young

Author Affiliations +

Proceedings Volume 8352, 28th European Mask and Lithography Conference; 835205 (2012) https://doi.org/10.1117/12.918495
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany

Abstract

With the introduction of the NXE:3100 NA=0.25 exposure system a big step has been made to get EUV lithography ready for High Volume Manufacturing. Over the last year, 6 exposure systems have been shipped to various customers around the world, active in Logic, DRAM, MPU and Flash memory, covering all major segments in the semi-conductor industry. The integration and qualification of these systems have provided a great learning, identifying the benefits of EUV over ArF immersion and the critical parameters of the exposure tool and how to operate it. In this paper we will focus specifically on the imaging performance of the NXE:3100 EUV scanner. Having been operational for more than a year a wide range of features were evaluated for lithographic performance across the field and across wafer. CD results of 32nm contact holes, 27nm isolated and dense lines, 27nm two-bar, 22nm dense L/S with Dipole, as well as several device features will be discussed and benchmarked against the current ArF immersion performance. A budget verification will be presented showing CD and contrast budgets for a selection of lithographic features. The contribution of the resist process and the mask will be discussed as well. The litho performance optimization will be highlighted with the 27nm twobar and isolated lines features that are sensitive to the illuminator pupil shape and projection lens aberrations. We will estimate the amount of resist induced contrast loss for 27 and 22nm L/S based on measurements of Exposure Latitude and the contributors from the exposure system. We will further present on the impact of variations in the mask blank and patterned mask on imaging, with several new contributors to take into account compared to traditional transmission masks. Finally, the combined results will be projected to the NXE:3300 NA=0.33 exposure system to give an outlook for its imaging performance capabilities.

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Eelco van Setten, Koen van Ingen Schenau, Mark O'Mahony, Thijs Hollink, Friso Wittebrood, Natalia Davydova, Mark Eurlings, Kees Feenstra, Jo Finders, Mircea Dusa, and Stuart Young "NXE:3100 full wafer imaging performance and budget verification", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 835205 (16 April 2012); https://doi.org/10.1117/12.918495

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