Double exposure as a method to correct on-wafer CD variations: a proposal

Arthur Hotzel; Holger Bald

doi:10.1117/12.923649

16 April 2012 Double exposure as a method to correct on-wafer CD variations: a proposal

Arthur Hotzel, Holger Bald

Proceedings Volume 8352, 28th European Mask and Lithography Conference; 83520D (2012) https://doi.org/10.1117/12.923649
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany

Abstract

Keeping across-field CD variation on the wafer within the tight limits imposed by 28nm and other advanced technologies is a challenge, particularly in a foundry where designs of different customers are realized. We propose a cost-efficient, fast, and flexible method to improve CD uniformity and correct reticle or design-induced variation, by applying a second exposure to the wafer, in the form of a grey scale map created with a low grade correction reticle. Compared to CD correction by subsequent modification of the primary reticle, this method has the potential of much higher spatial resolution and simpler logistics, which make it an attractive alternative especially for prototyping and lowvolume production.

Citation Download Citation

Arthur Hotzel and Holger Bald "Double exposure as a method to correct on-wafer CD variations: a proposal", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520D (16 April 2012); https://doi.org/10.1117/12.923649

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