Optoelectronic Diodes And CCDs In Vacuum

S. Hava; N. S. Kopeika

doi:10.1117/12.968178

1 January 1987 Optoelectronic Diodes And CCDs In Vacuum

S. Hava, N. S. Kopeika

Proceedings Volume 0842, Fiber Optics Reliability: Benign and Adverse Environments; (1987) https://doi.org/10.1117/12.968178
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Electrical and optical properties of light-emitting diodes and photodiodes can change significantly in vacuum. These changes involve alterations in forward and reverse current-voltage and capacitance-reverse voltage characteristics, time response, spectral characteristics, quantum efficiency, diode ideality factor, etc. Here, attention is centered on alterations in electrical properties of imaging CCDs in vacuum. Such alterations include increased dark signal, increased responsivity at longer wavelengths in particular, and non-linearity of response.

Citation Download Citation

S. Hava and N. S. Kopeika "Optoelectronic Diodes And CCDs In Vacuum", Proc. SPIE 0842, Fiber Optics Reliability: Benign and Adverse Environments, (1 January 1987); https://doi.org/10.1117/12.968178

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