Paper
29 June 2012 Shedding light on EUV mask inspection
Kazunori Seki, Karen Badger, Emily Gallagher, Toshio Konishi, Gregory McIntyre
Author Affiliations +
Abstract
EUV defect detectability is evaluated both through simulation and by conventional mask inspection tools at various wavelengths (13.5, 193, 257, 365, 488 and 532 nm). The simulations reveal that longer wavelength light penetrates deeper into the multilayer than shorter wavelength light, however this additional penetration does not necessarily provide an advantage over shorter wavelengths for detecting defects. Interestingly, for both blank and patterned mask inspections, each wavelength detected unique defects not seen at other wavelengths. In addition, it was confirmed that some of the defects that are detected only by longer wavelengths are printable. This study suggests that a combination of wavelengths may be the most comprehensive approach to finding printable defects as long as actinic inspection is not available.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Seki, Karen Badger, Emily Gallagher, Toshio Konishi, and Gregory McIntyre "Shedding light on EUV mask inspection", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844114 (29 June 2012); https://doi.org/10.1117/12.976059
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Inspection

Defect detection

Photomasks

Extreme ultraviolet

Smoothing

Multilayers

Scanning electron microscopy

Back to Top