Variable range hopping in hydrogenated amorphous silicon-nickel alloys

Abdelfattah Narjis; Abdelhamid El Kaaouachi; Abdelghani Sybous; Lhoussine Limouny; Said Dlimi; Gerard Biskupski

doi:10.1117/12.924337

27 September 2012 Variable range hopping in hydrogenated amorphous silicon-nickel alloys

Abdelfattah Narjis, Abdelhamid El Kaaouachi, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Gerard Biskupski

Proceedings Volume 8459, Physical Chemistry of Interfaces and Nanomaterials XI; 84590V (2012) https://doi.org/10.1117/12.924337
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.

Citation Download Citation

Abdelfattah Narjis, Abdelhamid El Kaaouachi, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, and Gerard Biskupski "Variable range hopping in hydrogenated amorphous silicon-nickel alloys", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590V (27 September 2012); https://doi.org/10.1117/12.924337

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