Paper
12 October 2012 Pulsed and continuous wave solid phase laser annealing of electrodeposited CuInSe2 thin films
Ashish Bhatia, Helen Meadows, Alexandre Crossay, Phillip J. Dale, Michael A. Scarpulla
Author Affiliations +
Abstract
Cu(In,Ga)Se2 (CIGS) thin film photovoltaic absorber layers are primarily synthesized by vacuum based techniques at industrial scale. In this work, we investigate non-vacuum film synthesis by electrochemical deposition coupled with pulsed laser annealing (PLA) and or continuous wave laser annealing (CWLA) using 1064 nm laser. PLA results indicate that at high fluence (≥100 mJ/cm2) CuInSe2 films melt and dewet on both Mo and Cu substrates. In the submelt PLA regime (≤70 mJ/cm2) no change in XRD results is recorded. However CWLA at 50 W/cm2 for up to 45 s does not result in melting or dewetting of the film. XRD and Raman data indicate more than 80% reduction in full width at half maximum (FWHM) in their respective main peaks for annealing time of 15 s or more. No other secondary phases are observed in XRD or Raman spectrum. These results might help us in setting up the foundation for processing CIGS through an entirely non-vacuum process.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashish Bhatia, Helen Meadows, Alexandre Crossay, Phillip J. Dale, and Michael A. Scarpulla "Pulsed and continuous wave solid phase laser annealing of electrodeposited CuInSe2 thin films", Proc. SPIE 8473, Laser Material Processing for Solar Energy, 84730F (12 October 2012); https://doi.org/10.1117/12.930147
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Cited by 9 scholarly publications.
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KEYWORDS
Annealing

Raman spectroscopy

Thin films

Pulsed laser operation

Scanning electron microscopy

Crystals

Laser processing

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