Paper
24 October 2012 Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method
Author Affiliations +
Abstract
We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal grains. The detached Bridgman process also provides for direct control of the melt composition close to the growth front, allowing for accurate control of both the density of the Te/Cd precipitates as well as the majority carrier concentration in the grown material. The influence of melt-composition control and compensation by shallow and deep donors on detector performance is presented.
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Yadong Xu, Yihui He, Lingyan Xu, Tao Wang, Gangqiang Zha, and Wanqi Jie "Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method", Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 850710 (24 October 2012); https://doi.org/10.1117/12.928176
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KEYWORDS
Tellurium

Crystals

Etching

Sensors

Infrared imaging

Infrared microscopy

Microscopes

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