Paper
8 November 2012 Photomask etch: addressing the resist challenges for advanced phase-shift and binary photomasks
Michael Grimbergen, Madhavi Chandrachood, Keven Yu, Toi Yue Becky Leung, Amitabh Sabharwal, Ajay Kumar
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Abstract
As lithography requirements mandate ever-thinner resist thickness, the need for in-situ monitoring has become more urgent. In this paper we present an in-situ optical methodology-based system to determine residual photoresist thickness during advanced photomask etch with < 1000 Å photoresist. Several types of phase-shift masks and photoresists were examined. A series of masks were etched to demonstrate the performance of the system. Results show an average accuracy of better than 2%, with a maximum absolute range of all tests within 8%.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Grimbergen, Madhavi Chandrachood, Keven Yu, Toi Yue Becky Leung, Amitabh Sabharwal, and Ajay Kumar "Photomask etch: addressing the resist challenges for advanced phase-shift and binary photomasks", Proc. SPIE 8522, Photomask Technology 2012, 85222M (8 November 2012); https://doi.org/10.1117/12.981215
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KEYWORDS
Etching

Photomasks

Photoresist materials

Binary data

Data modeling

Signal processing

Plasma etching

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