Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations

S. Dutta Gupta; Abhijit Biswas; J. Mitard; G. Eneman; B. De Jaeger; M. Meuris; M. M. Heyns

doi:10.1117/12.926877

15 October 2012 Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations

S. Dutta Gupta, Abhijit Biswas, J. Mitard, G. Eneman, B. De Jaeger, M. Meuris, M. M. Heyns

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854920 (2012) https://doi.org/10.1117/12.926877
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Device characteristics for long-channel Ge-pMOSFETs with different channel-orientations and figures of merit for analog applications are reported. The electrical characteristics include the capacitance-voltage curve at frequency 500 kHz and the transfer characteristics for both the low and high drain voltages. Various device parameters of Ge pMOSFETs have been extracted utilizing the measured data for both the regular i. e., Ge <110< and oriented i. e., Ge <100< devices with post metallization anneal. The oriented device exhibits augmented transconductance, while output resistance and intrinsic gain show improvement for the regular device. The conductance efficiency is almost same for both the regular and oriented devices in the strong inversion region of operation whereas the parameter exhibits some improvement for regular devices in the weak inversion region.

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S. Dutta Gupta, Abhijit Biswas, J. Mitard, G. Eneman, B. De Jaeger, M. Meuris, and M. M. Heyns "Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854920 (15 October 2012); https://doi.org/10.1117/12.926877

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KEYWORDS

Germanium

Analog electronics

Silicon

Resistance

Field effect transistors

Scattering

Dielectrics

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