Paper
18 March 2013 Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition
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Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261X (2013) https://doi.org/10.1117/12.2013601
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
MgZnO thin films were grown on c-sapphire and ZnO-coated c-sapphire substrates by pulsed laser deposition from a ZnMgO target with 4 at% Mg. The MgZnO grown on the ZnO underlayer showed significantly better crystal quality than that grown directly on sapphire. AFM studies revealed a significant deterioration in surface morphology for the MgZnO layers compared with the ZnO underlayer. Optical transmission studies indicated a MgZnO bandgap of 3.61eV (compared with 3.34eV for the ZnO), which corresponds to a Mg content of about 16.1 at%. The MgZnO/ZnO heterojunction showed an anomalously low resistivity, which was more than two orders of magnitude less than the MgZnO layer and an order of magnitude lower than that for the ZnO layer. It was suggested that this may be attributable to the presence of a 2D electron gas at the ZnMgO/ZnO heterointerface.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Rogers, F. Hosseini Teherani, P. Bove, A. Lusson, and M. Razeghi "Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261X (18 March 2013); https://doi.org/10.1117/12.2013601
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KEYWORDS
Zinc oxide

Magnesium

Heterojunctions

Pulsed laser deposition

Ultraviolet radiation

Atomic force microscopy

Crystals

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