Paper
1 January 1987 Intermixing In AlAs-GaAs Superlattices
E V.K Rao
Author Affiliations +
Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943569
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
After a brief introduction to the basics of impurity induced disordering in AlAs(or AlxGa1-xAs)-GaAS super-lattices and quantum wells, a detailed review of different experimental methods presently empioyed to achieve intermixing are presented and discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E V.K Rao "Intermixing In AlAs-GaAs Superlattices", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943569
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Cited by 4 scholarly publications.
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KEYWORDS
Silicon

Diffusion

Beryllium

Laser sintering

Aluminum

Gallium

Zinc

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