Fundamentals of overlay measurement and inspection using scanning electron-microscope

T. Kato; Y. Okagawa; O. Inoue; K. Arai; S. Yamaguchi

doi:10.1117/12.2011046

10 April 2013 Fundamentals of overlay measurement and inspection using scanning electron-microscope

T. Kato, Y. Okagawa, O. Inoue, K. Arai, S. Yamaguchi

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86812Q (2013) https://doi.org/10.1117/12.2011046
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Scanning electron-microscope (SEM) has been successfully applied to CD measurement as promising tools for qualifying and controlling quality of semiconductor devices in in-line manufacturing process since 1985. Furthermore SEM is proposed to be applied to in-die overlay monitor in the local area which is too small to be measured by optical overlay measurement tools any more, when the overlay control limit is going to be stringent and have un-ignorable dependence on device pattern layout, in-die location, and singular locations in wafer edge, etc. In this paper, we proposed new overlay measurement and inspection system to make an effective use of in-line SEM image, in consideration of trade-off between measurement uncertainty and measurement pattern density in each SEM conditions. In parallel, we make it clear that the best hybrid overlay metrology is in considering each tool’s technology portfolio.

Citation Download Citation

T. Kato, Y. Okagawa, O. Inoue, K. Arai, and S. Yamaguchi "Fundamentals of overlay measurement and inspection using scanning electron-microscope", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812Q (10 April 2013); https://doi.org/10.1117/12.2011046

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