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10 April 2013 The evolving complexity of patterning materials
Tsutomu Shimokawa, Yoshi Hishiro, Yoshikazu Yamaguchi, Motoyuki Shima, Tooru Kimura, Yoshio Takimoto, Tomoki Nagai
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Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868202 (2013) https://doi.org/10.1117/12.2014526
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States
Abstract
People have enjoyed innovations which are made possible with the device scaling. The industry has been challenging to realize the Moore’s Law. Resolution limit of ArF immersion scanner has already been larger than the device CD necessary now. Device structures have been getting more and more complicated to meet various technology requirements such as scaling, device speed, low power consumption and so on. Not only the scaling but also complication has to be overcome to realize those requirements. Scaling requirements, device structure, and new types of architectures for new generation device with the limited single exposure capability force us to keep using and exploring complicated multi-step patterning techniques or “tricks”. Device design, elements, process, and consumable tricks and JSR’s solution have been reviewed.
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Tsutomu Shimokawa, Yoshi Hishiro, Yoshikazu Yamaguchi, Motoyuki Shima, Tooru Kimura, Yoshio Takimoto, and Tomoki Nagai "The evolving complexity of patterning materials", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868202 (10 April 2013); https://doi.org/10.1117/12.2014526
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KEYWORDS
Optical lithography
Extreme ultraviolet lithography
Photoresist materials
Double patterning technology
Metals
Oxides
Scanners
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