Paper
1 October 2013 The lithographer's dilemma: shrinking without breaking the bank
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Proceedings Volume 8886, 29th European Mask and Lithography Conference; 888602 (2013) https://doi.org/10.1117/12.2030193
Event: 29th European Mask and Lithography Conference, 2013, Dresden, Germany
Abstract
It can no longer be assumed that the lithographic scaling which has previously driven Moore’s Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry J. Levinson "The lithographer's dilemma: shrinking without breaking the bank", Proc. SPIE 8886, 29th European Mask and Lithography Conference, 888602 (1 October 2013); https://doi.org/10.1117/12.2030193
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KEYWORDS
Lithography

Double patterning technology

Optical lithography

Photomasks

Extreme ultraviolet lithography

Directed self assembly

Semiconducting wafers

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