Research on the electrical characteristics of the Pt/CdS Schottky diode

Jia-xin Ding; Xiang-feng Zhang; Guansheng Yao

doi:10.1117/12.2033170

21 August 2013 Research on the electrical characteristics of the Pt/CdS Schottky diode

Jia-xin Ding, Xiang-feng Zhang, Guansheng Yao

Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 890818 (2013) https://doi.org/10.1117/12.2033170
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

Citation Download Citation

Jia-xin Ding, Xiang-feng Zhang, and Guansheng Yao "Research on the electrical characteristics of the Pt/CdS Schottky diode", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 890818 (21 August 2013); https://doi.org/10.1117/12.2033170

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KEYWORDS

Cadmium sulfide

Diodes

Ultraviolet radiation

Ultraviolet detectors

Platinum

Missiles

Infrared detectors

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