Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp

Tetsunori Murachi; Tsuyoshi Amano; Tomohiro Suzuki; Hiroki Miyai

doi:10.1117/12.2046130

17 April 2014 Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp

Tetsunori Murachi, Tsuyoshi Amano, Tomohiro Suzuki, Hiroki Miyai

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 904820 (2014) https://doi.org/10.1117/12.2046130
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

A major challenge for extreme ultraviolet lithography (EUVL) is avoiding defects in the fabrication of multilayered (ML) mask blanks. Substrate defects and adders during ML coating are responsible for ML defects which causes changes on phase and amplitude of EUV light. ML defects must be identified by inspection prior to absorber patterning in order to reduce the effects of ML defects via covering them with patterns to permit the use of fewer ML defect blanks. Fiducial marks (FMs) on ML blanks can be used for mask alignment and to accurately and precisely determine the locations of ML defects. In this study, we fabricated an FM mask by resist exposure using an e-beam writer and etching. Then, we inspected FMs and ML defects with an EUV actinic full-field mask blank inspection tool developed by EIDEC-LaserTec (LT ABI). Next, we evaluated the ML defect location accuracy on the mask based on FMs of several line depths by deriving center position of FMs and defects with Lorentz, Gaussian fitting and center-of-mass calculation. Here, we explain the estimation of defect location accuracy using FMs and the LT ABI, and discuss the defect numbers which can be covered by absorber patterns. Fewer than 19 defects per blank should be required for EUV blanks to cover ML defects with patterns.

Citation Download Citation

Tetsunori Murachi, Tsuyoshi Amano, Tomohiro Suzuki, and Hiroki Miyai "Improvement of defect mitigation with EUV actinic blank inspection prototype for 16 nm hp", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904820 (17 April 2014); https://doi.org/10.1117/12.2046130

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