300mm pilot line DSA contact hole process stability

M. Argoud; I. Servin; A. Gharbi; P. Pimenta Barros; K. Jullian; M. Sanche; G. Chamiot-Maitral; S. Barnola; R. Tiron; C. Navarro; X. Chevalier; C. Nicolet; G. Fleury; G. Hadziioannou; M. Asai; C. Pieczulewski

doi:10.1117/12.2046315

28 March 2014 300mm pilot line DSA contact hole process stability

M. Argoud, I. Servin, A. Gharbi, P. Pimenta Barros, K. Jullian, M. Sanche, G. Chamiot-Maitral, S. Barnola, R. Tiron, C. Navarro, X. Chevalier, C. Nicolet, G. Fleury, G. Hadziioannou, M. Asai, C. Pieczulewski

Author Affiliations +

Proceedings Volume 9049, Alternative Lithographic Technologies VI; 904929 (2014) https://doi.org/10.1117/12.2046315
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Directed Self-Assembly (DSA) is today a credible alternative lithographic technology for semiconductor industry [1]. In the coming years, DSA integration could be a standard complementary step with other lithographic techniques (193nm immersion, e-beam, extreme ultraviolet). Its main advantages are a high pattern resolution (down to 10nm), a capability to decrease an initial pattern edge roughness [2], an absorption of pattern guide size variation, no requirement of a high-resolution mask and can use standard fab-equipment (tracks and etch tools). The potential of DSA must next be confirmed viable for high volume manufacturing. Developments are necessary to transfer this technology on 300mm wafers in order to demonstrate semiconductor fab-compatibility [3-7]. The challenges concern especially the stability, both uniformity and defectivity, of the entire process, including tools and Blok Co-Polymer (BCP) materials. To investigate the DSA process stability, a 300mm pilot line with DSA dedicated track (SOKUDO DUO) is used at CEALeti. BCP morphologies with PMMA cylinders in a PS matrix are investigated (about 35nm natural period). BCP selfassembly in unpatterned surface and patterned surface (graphoepitaxy) configurations are considered in this study. Unpatterned configuration will initially be used for process optimization and fix a process of record. Secondly, this process of record will be monitored with a follow-up in order to validate its stability. Steps optimization will be applied to patterned surface configurations (graphoepitaxy) for contact hole patterning application. A process window of contact hole shrink process will be defined. Process stability (CD uniformity and defectivity related to BCP lithography) will be investigated.

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M. Argoud, I. Servin, A. Gharbi, P. Pimenta Barros, K. Jullian, M. Sanche, G. Chamiot-Maitral, S. Barnola, R. Tiron, C. Navarro, X. Chevalier, C. Nicolet, G. Fleury, G. Hadziioannou, M. Asai, and C. Pieczulewski "300mm pilot line DSA contact hole process stability", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904929 (28 March 2014); https://doi.org/10.1117/12.2046315

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