Characterization of chemically amplified resists for electron beam lithography

Tomoharu Yamazaki; Hiroki Yamamoto; Takahiro Kozawa; Wen-Chuan Wang

doi:10.1117/12.2046240

27 March 2014 Characterization of chemically amplified resists for electron beam lithography

Tomoharu Yamazaki, Hiroki Yamamoto, Takahiro Kozawa, Wen-Chuan Wang

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 90511J (2014) https://doi.org/10.1117/12.2046240
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

For better understanding of electron beam resist processes, it is important to characterize the resist materials on the basis of their reaction mechanisms. In this study, the basic parameters which characterize the chemical reactions for latent image formation upon exposure to electron beam were evaluated. The electron beam resist used was a chemically amplified resist, the backbone polymer of which is poly(4-hydroxystyrene). 49% of the hydroxyl groups were protected with t-butoxycarbonyl groups. The stopping power was 0.529 eV nm^-1. The G-value of acid generation was 2.5. The effective reaction radius for deprotection was approximately 0.02 nm. The diffusion constant of acids was 1.3 nm² s^-1. The diffusion constant of quenchers was significantly lower than that of acids. The product of LER and chemical gradient (dm/dx) was approximately 0.06.

Citation Download Citation

Tomoharu Yamazaki, Hiroki Yamamoto, Takahiro Kozawa, and Wen-Chuan Wang "Characterization of chemically amplified resists for electron beam lithography", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511J (27 March 2014); https://doi.org/10.1117/12.2046240

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