Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist

Hiroyasu Tanaka; Hiroyuki Tanagi; Shoichi Hayakawa; Kikuo Furukawa; Hiroki Yamamoto; Takahiro Kozawa

doi:10.1117/12.2045887

27 March 2014 Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist

Hiroyasu Tanaka, Hiroyuki Tanagi, Shoichi Hayakawa, Kikuo Furukawa, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 9051, Advances in Patterning Materials and Processes XXXI; 905127 (2014) https://doi.org/10.1117/12.2045887
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices below 1X nm half-pitch. Many efforts have revealed that the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the RLS trade-off. For the development of EUV resists, the novel protecting derivatives were designed. To clarify the lithographic performance of these derivatives, we synthesized the acrylic polymers containing these derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV/EB radiation. On the basis of the lithographic performances of these resist sample, we evaluated the characteristics of novel protecting derivatives upon exposure to EUV/EB radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Citation Download Citation

Hiroyasu Tanaka, Hiroyuki Tanagi, Shoichi Hayakawa, Kikuo Furukawa, Hiroki Yamamoto, and Takahiro Kozawa "Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905127 (27 March 2014); https://doi.org/10.1117/12.2045887

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