Paper
31 March 2014 Pattern fidelity in multiple-patterning process
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Abstract
Pattern roughness is expected to be an important issue in semiconductor scaling going forward. We performed smoothing of ArF photoresists (PRs) by a PR hardening technique called direct current superposition (DCS) cure,1) and we showed that this technique can achieve a roughness smoothing effect for PRs having various line edge roughness (LER) conditions. Additionally, we showed that this smoothing technique has many process advantages from the viewpoint of lithography, such as an improved mask error enhancement factor (MEEF), expanded process window, and improved local critical dimension (CD) uniformity. We consider that these advantages occur because of a CD healing effect caused by linear dependence of shrink amount with line width due to the DCS cure technique.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Yamato, Sakurako Natori, Shohei Yamauchi, Arisa Hara, Kenichi Oyama, and Hidetami Yaegashi "Pattern fidelity in multiple-patterning process", Proc. SPIE 9052, Optical Microlithography XXVII, 90520R (31 March 2014); https://doi.org/10.1117/12.2046643
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Line edge roughness

Etching

System on a chip

Line width roughness

Lithography

Critical dimension metrology

Scanning electron microscopy

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