14-nm photomask simulation sensitivity

John Sturtevant; Peter Buck; Steffen Schulze; David Fryer; Edita Tejnil; Kostas Adam; Michael Lam; Chris Clifford; Mike Oliver; Ana Armeanu; Franklin Kalk; Kent Nakagawa; Guoxiang Ning; Paul Ackmann; Fritz Gans; Christian Buergel

doi:10.1117/12.2066483

17 October 2014 14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Author Affiliations +

Proceedings Volume 9231, 30th European Mask and Lithography Conference; 92310I (2014) https://doi.org/10.1117/12.2066483
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany

Abstract

This study quantifies the impact of systematic mask errors on OPC model accuracy and proposes a methodology to reconcile the largest errors via calibration to the mask error signature in wafer data. First, we examine through simulation, the impact of uncertainties in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state of the art mask manufacturing data while other variable values are speculated, highlighting the need for improved metrology and communication between mask and OPC model experts. It is shown that the wafer simulations are highly dependent upon the 1D/2D representation of the mask, in addition to the mask sidewall for 3D mask models. In addition, this paper demonstrates substantial accuracy improvements in the 3D mask model using physical perturbations of the input mask geometry when using Domain Decomposition Method (DDM) techniques. Results from four test cases demonstrate that small, direct modifications in the input mask stack slope and edge location can result in model calibration and verification accuracy benefit of up to 30%. We highlight the benefits of a more accurate description of the 3D EMF near field with crosstalk in model calibration and impact as a function of mask dimensions. The result is a useful technique to align DDM mask model accuracy with physical mask dimensions and scattering via model calibration.

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John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, and Christian Buergel "14-nm photomask simulation sensitivity", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310I (17 October 2014); https://doi.org/10.1117/12.2066483

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