Paper
8 October 2014 Pattern-based pre-OPC operation to improve model-based OPC runtime
Piyush Verma, Fadi Batarseh, Shikha Somani, Jingyu Wang, Sarah McGowan, Sriram Madhavan
Author Affiliations +
Abstract
Full chip model based Optical Proximity Correction (OPC) at advanced nodes involves iteratively modifying the drawn polygon shapes while simulating them through complex optical and resist models. Due to the computational complexity of the models and the large size of VLSI designs, these mask simulations run for very long times. In this study we propose a pattern replacement step to generate a partial mask solution before applying model based OPC correction. Since the pattern replacement step is very fast and model based OPC has to be applied only to a portion of the design, total mask generation runtime is significantly reduced.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piyush Verma, Fadi Batarseh, Shikha Somani, Jingyu Wang, Sarah McGowan, and Sriram Madhavan "Pattern-based pre-OPC operation to improve model-based OPC runtime", Proc. SPIE 9235, Photomask Technology 2014, 923506 (8 October 2014); https://doi.org/10.1117/12.2068998
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical proximity correction

Photomasks

Very large scale integration

Model-based design

Logic

Image classification

Library classification systems

Back to Top