Technology of alignment mark in electron beam lithography

Min Zhao; Tang Xu; Baoqin Chen; Jiebin Niu

doi:10.1117/12.2068112

21 August 2014 Technology of alignment mark in electron beam lithography

Min Zhao, Tang Xu, Baoqin Chen, Jiebin Niu

Proceedings Volume 9285, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Smart Structures and Materials for Manufacturing and Testing; 92850C (2014) https://doi.org/10.1117/12.2068112
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China

Abstract

Electron beam direct wring lithography has been an indispensable approach by which all sorts of novel nano-scale devices include many kinds optical devices can be fabricated. Alignment accuracy is a key factor especially to those devices which need multi-level lithography. In addition to electron beam lithography system itself the quality of alignment mark directly influences alignment accuracy. This paper introduces fundamental of alignment mark detection and discusses some techniques of alignment mark fabrication along with considerations for obtaining highly accurate alignment taking JBX5000LS and JBX6300FS e-beam lithography systems for example.
The fundamental of alignment mark detection is expounded first. Many kinds of factors which can impact on the quality of alignment mark are analyzed including mark materials, depth of mark groove and influence of multi-channel process. It has been proved from experiments that material used as metal mark with higher average atomic number is better beneficial for getting high alignment accuracy. Depth of mark groove is required to 1.5～5 μm on our experience. The more process steps alignment mark must pass through, the more probability of being damaged there will be. So the compatibility of alignment mark fabrication with the whole device process and the protection of alignment mark are both need to be considered in advance.

Citation Download Citation

Min Zhao, Tang Xu, Baoqin Chen, and Jiebin Niu "Technology of alignment mark in electron beam lithography", Proc. SPIE 9285, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Smart Structures and Materials for Manufacturing and Testing, 92850C (21 August 2014); https://doi.org/10.1117/12.2068112

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available