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19 March 2015 Multi-stack extreme-ultraviolet pellicle with out-of-band reduction
Sung-Gyu Lee, Guk-Jin Kim, In-Seon Kim, Jin-Ho Ahn, Jin-Goo Park, Hye-Keun Oh
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Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221O (2015) https://doi.org/10.1117/12.2086052
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States
Abstract
The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle.
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Citation Download Citation
Sung-Gyu Lee, Guk-Jin Kim, In-Seon Kim, Jin-Ho Ahn, Jin-Goo Park, and Hye-Keun Oh "Multi-stack extreme-ultraviolet pellicle with out-of-band reduction", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221O (19 March 2015); https://doi.org/10.1117/12.2086052
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KEYWORDS
Extreme ultraviolet
Pellicles
Reflectivity
Semiconducting wafers
Radiation effects
Photomasks
Deep ultraviolet
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