Imprint directed self-assembly of cylinder-forming Si-containing block copolymer for 6nm half-pitch line patterning

Shuaigang Xiao; XiaoMin Yang; Yautzong Hsu; Kim Y. Lee; David Kuo

doi:10.1117/12.2085986

19 March 2015 Imprint directed self-assembly of cylinder-forming Si-containing block copolymer for 6nm half-pitch line patterning

Shuaigang Xiao, XiaoMin Yang, Yautzong Hsu, Kim Y. Lee, David Kuo

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Proceedings Volume 9423, Alternative Lithographic Technologies VII; 94230O (2015) https://doi.org/10.1117/12.2085986
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

A new imprint directed self-assembly (DSA) route is developed for creating high resolution line patterns consisting of in-plane polystyrene-block-polydimethylsiloxane (PS-b- PDMS) cylinders. Resist line prepatterns are prepared by nanoimprint and trimmed by oxygen plasma to proper feature geometry and dimension. Registered block copolymer line patterns with exceptional long-range order are generated after DSA then, with the smallest half-pitch of 6 nm or so. Excellent stretching capability of PS-b-PDMS polymer chains indicates a broad process window for DSA. Initial pattern transfer results at 16.5 nm pitch imply the potential of this approach for future nanodevice fabrication at ultra-high pattern resolution.

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Shuaigang Xiao, XiaoMin Yang, Yautzong Hsu, Kim Y. Lee, and David Kuo "Imprint directed self-assembly of cylinder-forming Si-containing block copolymer for 6nm half-pitch line patterning", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94230O (19 March 2015); https://doi.org/10.1117/12.2085986

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KEYWORDS

Directed self assembly

Picosecond phenomena

Oxygen

Reactive ion etching

Etching

Nanoimprint lithography

Optical lithography

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