Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

Andreas Frommhold; Alexandra McClelland; Dongxu Yang; Richard E. Palmer; John Roth; Yasin Ekinci; Mark C. Rosamund; Alex P. G. Robinson

doi:10.1117/12.2085672

20 March 2015 Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

Andreas Frommhold, Alexandra McClelland, Dongxu Yang, Richard E. Palmer, John Roth, Yasin Ekinci, Mark C. Rosamund, Alex P. G. Robinson

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 942504 (2015) https://doi.org/10.1117/12.2085672
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm². The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well.

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Andreas Frommhold, Alexandra McClelland, Dongxu Yang, Richard E. Palmer, John Roth, Yasin Ekinci, Mark C. Rosamund, and Alex P. G. Robinson "Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942504 (20 March 2015); https://doi.org/10.1117/12.2085672

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