Organic hard masks utilizing fullerene derivatives

Andreas Frommhold; Alan G. Brown; Richard E. Palmer; Tom Lada; Alex P. Robinson

doi:10.1117/12.2085675

20 March 2015 Organic hard masks utilizing fullerene derivatives

Andreas Frommhold, Alan G. Brown, Richard E. Palmer, Tom Lada, Alex P. Robinson

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94250L (2015) https://doi.org/10.1117/12.2085675
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

We have developed a series of fullerene containing materials for use as organic hard masks. Films with a thickness of up to 250 nm were deposited via spin coating. After a crosslinking bake the films exhibit good thermal stability – in the best case a mass loss of less than 3% at 400 °C is seen. Etch resistance of the different formulations are presented and hig-hresolution patterning is demonstrated. During the transfer into silicon no adverse “wiggling” is observed at high resolution. We attribute this to the low levels of aliphatic hydrogen present in the materials.

Citation Download Citation

Andreas Frommhold, Alan G. Brown, Richard E. Palmer, Tom Lada, and Alex P. Robinson "Organic hard masks utilizing fullerene derivatives", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250L (20 March 2015); https://doi.org/10.1117/12.2085675

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