Process highlights to enhance DSA contact patterning performances

A. Gharbi; R. Tiron; M. Argoud; G. Chamiot-Maitral; A. Fouquet; C. Lapeyre; P. Pimenta Barros; A. Sarrazin; I. Servin; F. Delachat; S. Bos; S. Bérard-Bergery; J. Hazart; X. Chevalier; C. Nicolet; C. Navarro; I. Cayrefourcq; S. Bouanani; C. Monget

doi:10.1117/12.2219210

22 March 2016 Process highlights to enhance DSA contact patterning performances

A. Gharbi, R. Tiron, M. Argoud, G. Chamiot-Maitral, A. Fouquet, C. Lapeyre, P. Pimenta Barros, A. Sarrazin, I. Servin, F. Delachat, S. Bos, S. Bérard-Bergery, J. Hazart, X. Chevalier, C. Nicolet, C. Navarro, I. Cayrefourcq, S. Bouanani, C. Monget

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 97770T (2016) https://doi.org/10.1117/12.2219210
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

In this paper, we focus on the directed-self-assembly (DSA) application for contact hole (CH) patterning using polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymers (BCPs). By employing the DSA planarization process, we highlight the DSA advantages for CH shrink, repair and multiplication which are extremely needed to push forward the limits of currently used lithography. Meanwhile, we overcome the issue of pattern densityrelated- defects that are encountered with the commonly-used graphoepitaxy process flow. Our study also aims to evaluate DSA performances as function of material properties and process conditions by monitoring main key manufacturing process parameters: CD uniformity (CDU), placement error (PE) and defectivity (Hole Open Yield = HOY). Concerning process, it is shown that the control of surface affinity and the optimization of self-assembly annealing conditions enable to significantly enhance CDU and PE. Regarding materials properties, we show that the best BCP composition for CH patterning should be set at 70/30 of PS/PMMA total weight ratio. Moreover, it is found that increasing the PS homopolymer content from 0.2% to 1% has no impact on DSA performances. Using a C35 BCP (cylinder-forming BCP of natural period L₀ = 35nm), high DSA performances are achieved: CDU-3σ = 1.2nm, PE-3σ = 1.2nm and HOY = 100%. The stability of DSA process is also demonstrated through the process follow-up on both patterned and unpatterned surfaces over several weeks. Finally, simulation results, using a phase field model based on Ohta-Kawasaki energy functional are presented and discussed with regards to experiments.

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A. Gharbi, R. Tiron, M. Argoud, G. Chamiot-Maitral, A. Fouquet, C. Lapeyre, P. Pimenta Barros, A. Sarrazin, I. Servin, F. Delachat, S. Bos, S. Bérard-Bergery, J. Hazart, X. Chevalier, C. Nicolet, C. Navarro, I. Cayrefourcq, S. Bouanani, and C. Monget "Process highlights to enhance DSA contact patterning performances", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770T (22 March 2016); https://doi.org/10.1117/12.2219210

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