Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM

Mattan Kamon; Mustafa Akbulut; Yiguang Yan; Daniel Faken; Andras Pap; Vasanth Allampalli; Ken Greiner; David Fried

doi:10.1117/12.2218935

22 March 2016 Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM

Mattan Kamon, Mustafa Akbulut, Yiguang Yan, Daniel Faken, Andras Pap, Vasanth Allampalli, Ken Greiner, David Fried

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 977710 (2016) https://doi.org/10.1117/12.2218935
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of SAQP patterning with LiNe chemoepitaxy on a 14nm DRAM process. To quantify the impact of this module replacement, we investigate a key process yield metric for DRAM: interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally-packed capacitors patterned with an array of diblock copolymer cylinders in place of LE4 patterning.

Citation Download Citation

Mattan Kamon, Mustafa Akbulut, Yiguang Yan, Daniel Faken, Andras Pap, Vasanth Allampalli, Ken Greiner, and David Fried "Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977710 (22 March 2016); https://doi.org/10.1117/12.2218935

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