In this presentation I will discuss some of the ways that these contributors can be measured, modeled and corrected as part of a Holistic Lithography methodology. Multiple-patterning techniques can be combined with EUV lithography to continue Moore’s law down to final pattern dimensions of 5-6 nm half pitch. |
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CITATIONS
Cited by 1 scholarly publication.
Overlay metrology
Etching
Optical proximity correction
Metrology
Process modeling
Semiconducting wafers
Optical lithography