PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Development of InP-based U-bend waveguide gain chips for hybrid integration on silicon platform is presented. We utilize Euler bend geometry to ensure small footprint along with low losses. The geometry allows to bring the input and output on the same facet and is used to simplify alignment for lower coupling losses. The interface between bend and straight waveguide is inspected by comparing shallow and deep etched waveguide profiles. The effects of this interface and the bend geometry on the device losses, electric properties and spectrum are reported. Finally, the integration of U-bend gain chips on silicon-on-insulator platform is demonstrated.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Heidi Tuorila, Jukka Viheriälä, Jae-Wung Lee, Mikko Harjanne, Matteo Cherchi, Timo Aalto, Mircea Guina, "Low loss InP traveling wave amplifiers with U-bend waveguide for hybrid integration on silicon photonics platform," Proc. SPIE PC12005, Smart Photonic and Optoelectronic Integrated Circuits 2022, PC120050B (5 March 2022); https://doi.org/10.1117/12.2609606