Greet Storms,1 Sjoerd Lok,1 Rob van Ballegoij,1 Jan van Schoothttps://orcid.org/0000-0001-6643-7254,1 Rudy Peeters,1 Diederik de Bruin,1 Kars Troost,1 Teun van Gogh1
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
With the introduction of High NA EUV technology the continuation of scaling semiconductor devices in a cost efficient manner will be secured for several technology nodes to come. In this paper we will discuss the benefits of High NA technology from a process complexity reduction point of view as well as the positive impact that this new lithography platform will bring to the industry in terms of cost of technology reduction.
Greet Storms,Sjoerd Lok,Rob van Ballegoij,Jan van Schoot,Rudy Peeters,Diederik de Bruin,Kars Troost, andTeun van Gogh
"High NA EUV enabling cost efficient scaling for N+1 technology nodes", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC1205104 (13 June 2022); https://doi.org/10.1117/12.2617240
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Greet Storms, Sjoerd Lok, Rob van Ballegoij, Jan van Schoot, Rudy Peeters, Diederik de Bruin, Kars Troost, Teun van Gogh, "High NA EUV enabling cost efficient scaling for N+1 technology nodes," Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC1205104 (13 June 2022); https://doi.org/10.1117/12.2617240