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This study presents a novel method for measuring the phase shift of EUV light passing through a thin film of Ru, a potential PSM material, using a coherent light source and an optical interferometer. Changes in the interference fringe were observed as the thickness of the Ru thin film was varied, and the refractive index of Ru was calculated using measured phase shift. The method was found to be effective for evaluating the phase shift of EUV light caused by passing through the thin film materials, which can contribute to the development of PSM materials to improve mask imaging performance and resolution.
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