1 October 1993 Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography
Mark A. Hartney, Roderick R. Kunz, Lynn M. Eriksen, Douglas C. LaTulipe
Author Affiliations +
Abstract
Liquid- and vapor-phase silylation processes are compared for a 193-nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 μm. These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.
Mark A. Hartney, Roderick R. Kunz, Lynn M. Eriksen, and Douglas C. LaTulipe "Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography," Optical Engineering 32(10), (1 October 1993). https://doi.org/10.1117/12.146843
Published: 1 October 1993
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CITATIONS
Cited by 9 scholarly publications and 3 patents.
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KEYWORDS
Silicon

Liquids

Photoresist processing

Lithography

Semiconducting wafers

Chemical analysis

Diffusion

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