Dr. George P. Patsis Profile

Dr. George P. Patsis

at Institute of Microelectronics

SPIE Involvement:

Author

Publications (20)

SPIE Journal Paper | 1 October 2010

Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis

Vassilios Constantoudis, George Patsis, Evangelos Gogolides

JM3, Vol. 9, Issue 04, 041207, (October 2010) https://doi.org/10.1117/12.10.1117/1.3497580

KEYWORDS: Polymers, Stochastic processes, Molecules, Surface roughness, Diffusion, Fractal analysis, Ionization, Laser sintering, Lab on a chip, Lithography

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Proceedings Article | 3 April 2010 Paper

Line width roughness effects on device performance: the role of the gate width design

V. Constantoudis, E. Gogolides, G. Patsis

Proceedings Volume 7641, 764116 (2010) https://doi.org/10.1117/12.853317

KEYWORDS: Line width roughness, Transistors, Critical dimension metrology, Manufacturing, Design for manufacturability, Performance modeling, Mathematical modeling, Lithography, Line edge roughness, Integration

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Proceedings Article | 31 March 2010 Paper

Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis

Vassilios Constantoudis, George Patsis, Evangelos Gogolides

Proceedings Volume 7639, 76392H (2010) https://doi.org/10.1117/12.848580

KEYWORDS: Polymers, Stochastic processes, Surface roughness, Ionization, Polymer thin films, Correlation function, Line edge roughness, Lithography, Fractal analysis, Laser sintering

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Proceedings Article | 31 March 2010 Paper

Macroscopic and stochastic modeling approaches to pattern doubling by acid catalyzed cross-linking

Jürgen Fuhrmann, André Fiebach, George Patsis

Proceedings Volume 7639, 76392I (2010) https://doi.org/10.1117/12.846491

KEYWORDS: Diffusion, Stochastic processes, Critical dimension metrology, Line width roughness, Chemistry, Polymers, Interfaces, Mathematical modeling, Optical resolution, Process modeling

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Proceedings Article | 4 March 2010 Paper

Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes

Andreas Erdmann, Feng Shao, Juergen Fuhrmann, Andre Fiebach, George Patsis, Peter Trefonas

Proceedings Volume 7640, 76400B (2010) https://doi.org/10.1117/12.845849

KEYWORDS: Lithography, Diffusion, Photoresist processing, Double patterning technology, Semiconducting wafers, Algorithm development, Refractive index, Photoresist materials, Computer simulations, Image processing

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Proceedings Article | 1 April 2009 Paper

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Vassilios Constantoudis, George Kokkoris, Panayiota Xydi, Evangelos Gogolides, Erwine Pargon, Mickael Martin

Proceedings Volume 7273, 72732J (2009) https://doi.org/10.1117/12.823608

KEYWORDS: Etching, Anisotropic etching, Line edge roughness, Plasma etching, 3D modeling, Photoresist processing, Line width roughness, Photoresist materials, Silicon, Plasma

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Proceedings Article | 2 May 2008 Paper

High resolution patterning and simulation on Mo/Si multilayer for EUV masks

N. Tsikrikas, G. Patsis, I. Raptis, A. Gerardino

Proceedings Volume 6792, 679216 (2008) https://doi.org/10.1117/12.798804

KEYWORDS: Monte Carlo methods, Photomasks, Optical simulations, Electron beam lithography, Metrology, Extreme ultraviolet, Electron beams, Software development, Laser scattering, Scattering

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Proceedings Article | 24 March 2008 Paper

Electron-beam-patterning simulation and metrology of complex layouts on Si/Mo multilayer substrates

G. Patsis, D. Drygiannakis, N. Tsikrikas, I. Raptis, E. Gogolides

Proceedings Volume 6922, 69222K (2008) https://doi.org/10.1117/12.769392

KEYWORDS: Monte Carlo methods, Photomasks, Lithography, Polymers, Metrology, Stochastic processes, Silicon, Multilayers, Critical dimension metrology, Extreme ultraviolet lithography

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Proceedings Article | 6 April 2007 Paper

Stochastic simulation of material and process effects on the patterning of complex layouts

N. Tsikrikas, D. Drygiannakis, G. Patsis, G. Kokkoris, I. Raptis, E. Gogolides

Proceedings Volume 6518, 651836 (2007) https://doi.org/10.1117/12.708858

KEYWORDS: Line width roughness, Stochastic processes, Etching, Diffusion, Transistors, Materials processing, Monte Carlo methods, Device simulation, Electron beam lithography, Critical dimension metrology

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Proceedings Article | 5 April 2007 Paper

Correlation length and the problem of line width roughness

V. Constantoudis, G. Patsis, E. Gogolides

Proceedings Volume 6518, 65181N (2007) https://doi.org/10.1117/12.712283

KEYWORDS: Line width roughness, Transistors, Lithography, Scanning electron microscopy, Monte Carlo methods, Photoresist processing, Materials processing, Metrology, Diffusion, Stochastic processes

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Proceedings Article | 22 March 2007 Paper

Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

D. Drygiannakis, M. Nijkerk, G. Patsis, G. Kokkoris, I. Raptis, L. Leunissen, E. Gogolides

Proceedings Volume 6519, 65193T (2007) https://doi.org/10.1117/12.708847

KEYWORDS: Diffusion, Line width roughness, Line edge roughness, Etching, Stochastic processes, Photons, Polymers, Critical dimension metrology, Molecules, Extreme ultraviolet

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Proceedings Article | 11 April 2006 Paper

Line-width roughness analysis of EUV resists after development in homogenous CO₂ solutions using CO₂ compatible salts (CCS) by a three-parameter model

Vassilios Constantoudis, Evangelos Gogolides, George Patsis, Mark Wagner, James DeYoung, Chris Harbinson

Proceedings Volume 6153, 61533W (2006) https://doi.org/10.1117/12.656579

KEYWORDS: Line width roughness, Semiconducting wafers, Standards development, Extreme ultraviolet, Critical dimension metrology, Line edge roughness, Image processing, Image analysis, Software development, Scanning electron microscopy

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Proceedings Article | 24 March 2006 Paper

Integrated simulation of line-edge roughness (LER) effects on sub-65nm transistor operation: From lithography simulation, to LER metrology, to device operation

G. Patsis, V. Constantoudis, E. Gogolides

Proceedings Volume 6151, 61513J (2006) https://doi.org/10.1117/12.654736

KEYWORDS: Line width roughness, Transistors, Critical dimension metrology, Line edge roughness, Lithography, Diffusion, Stochastic processes, Metrology, Polymerization, Photoresist materials

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SPIE Journal Paper | 1 July 2004

Photoresist line-edge roughness analysis using scaling concepts

Vassilios Constantoudis, George Patsis, Evangelos Gogolides

JM3, Vol. 3, Issue 03, (July 2004) https://doi.org/10.1117/12.10.1117/1.1759325

KEYWORDS: Scanning electron microscopy, Edge roughness, Line edge roughness, Photoresist materials, Digital filtering, Line width roughness, Image analysis, Edge detection, Image filtering, Correlation function

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Proceedings Article | 24 May 2004 Paper

Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Monique Ercken, Leonardus Leunissen, Ivan Pollentier, George Patsis, Vassilios Constantoudis, Evangelos Gogolides

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.537339

KEYWORDS: Line edge roughness, Scanning electron microscopy, Etching, Atomic force microscopy, Diffusion, Metrology, Statistical analysis, Edge roughness, Spatial frequencies, Optical lithography

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Proceedings Article | 24 May 2004 Paper

Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation

Vassilios Constantoudis, George Patsis, Leonardus Leunissen, Evangelos Gogolides

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535153

KEYWORDS: Line edge roughness, Picosecond phenomena, Line width roughness, Critical dimension metrology, Edge roughness, Correlation function, Scanning electron microscopy, Cadmium, Semiconducting wafers, Distance measurement

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Proceedings Article | 14 May 2004 Paper

Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis

George Patsis, Vassilios Constantoudis, Evangelos Gogolides

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535202

KEYWORDS: Line edge roughness, Polymerization, Diffusion, Monte Carlo methods, Ionization, Polymers, Roentgenium, Photoresist processing, Surface roughness, Computer simulations

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Proceedings Article | 2 June 2003 Paper

Photoresist line-edge roughness analysis using scaling concepts

Vasilios Constantoudis, George Patsis, Evangelos Gogolides

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482809

KEYWORDS: Edge roughness, Line edge roughness, Scanning electron microscopy, Digital filtering, Line width roughness, Image analysis, Edge detection, Linear filtering, Photoresist materials, Gaussian filters

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Proceedings Article | 23 June 2000 Paper

Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography

Evangelia Tegou, Evangelos Gogolides, Panagiotis Argitis, Ioannis Raptis, George Patsis, Nikos Glezos, Zoilo Tan, Kim Lee, Phuong Le, Yautzong Hsu, Michael Hatzakis

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388283

KEYWORDS: Electron beam lithography, Process modeling, Photoresist processing, Lithography, Diffusion

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Proceedings Article | 5 June 1998 Paper

Electron-beam lithography on multilayer substrates: experimental and theoretical study

Ioannis Raptis, Giancarlo Meneghini, Anja Rosenbusch, Nikos Glezos, Rafaelle Palumbo, Marco Ardito, Leonardo Scopa, George Patsis, Evangelos Valamontes, Panagiotis Argitis

Proceedings Volume 3331, (1998) https://doi.org/10.1117/12.309597

KEYWORDS: Monte Carlo methods, Silicon, Gold, Electron beam lithography, Optical simulations, Scattering, Chemically amplified resists, Polymethylmethacrylate, Electron beams, Diffusion

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Showing 5 of 20 publications

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