Mr. Hongwen Zhao Profile

Hongwen Zhao

at Shanghai Huali Microelectronics Corp

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Publications (4)

Proceedings Article | 12 October 2021 Presentation + Paper

Characterization of mask CD mean-to-target for hotspot patterns by using SEM image contours

Kan Zhou, Xin Guo, Yinsheng Yu, Hongwen Zhao, Wenzhan Zhou, Yu Zhang, Ao Chen, Wenming Wu, Qijian Wan, Huaiyang Dou, Chunshan Du, Liguo Zhang, Germain Fenger

Proceedings Volume 11855, 118550E (2021) https://doi.org/10.1117/12.2601674

KEYWORDS: Photomasks, Scanning electron microscopy, Optical proximity correction, Semiconducting wafers, Feature extraction, Critical dimension metrology, Metrology, OLE for process control, Image quality, Image processing

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Proceedings Article | 22 February 2021 Presentation + Paper

Hybrid overlay control solution with CDSEM and optical metrology

Chengzhang Wu, Dongyu Xu, Hua Yuan, Yinsheng Yu, Hongwen Zhao, Wenzhan Zhou, Haifeng Pu, Faquan Liu, Jason Pei, Jinyan Song, Kevin Huang

Proceedings Volume 11611, 116111G (2021) https://doi.org/10.1117/12.2583804

KEYWORDS: Overlay metrology, Optical metrology, Process control, Optical parametric oscillators, Metrology, Semiconductors, Scanning electron microscopy, Optics manufacturing, Optical testing, Optical lithography

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With continued innovation of semiconductor processes, overlay control has become the most critical and challenging part. Advanced technology nodes require even tighter lithography overlay control, and therefore, high-order process corrections for inter-field (HOPC) and for intra-field (iHOPC) are adopted as a common solution to meet on-product overlay (OPO) specifications. High order corrections often require more measurement shots and more targets in field, which makes optical overlay metrology on scribe line targets the workhorse of overlay control due to its high throughput and low cost-of-ownership. This leads to the additional challenge that the measurement location also affects the accuracy of generated overlay corrections. For example, it is well known that there may be a spatially dependent offset between overlay on targets and the device. This is commonly called a non-zero offset (NZO) [1], which is a comparison between device overlay measured with the CD SEM after etching (AEI) and optical overlay measured on targets after litho (ADI). In addition, the position of targets could impact the validity of corrections modeled using these targets. The targets could be unevenly distributed in field, some targets huddle at an area, while not a single target appears at others. Hence, this kind of target layout has risks generating problematic field corrections at areas without enough targets. In this paper, we propose a hybrid method utilizing CDSEM overlay to fill in the position where optical overlay targets are deficient. With iHOPC model terms generated by optical overlay targets only, CDSEM metrology results from real devices reveal significantly larger overlay in areas with no targets. By means of this method, the mis-correction at locations where optical overlay targets are deficient is significantly restored, and consequently the OPO mean+3sigma is suppressed to <4nm. Furthermore, an inline control solution is proposed and implemented with the latest generation 5D Analyzer.

Proceedings Article | 23 March 2020 Paper

DFM: “Design for Manufacturing” or “Design Friendly Manufacturing” How to convert extra EPE budget into design freedom by SMO

Wenzhan Zhou, Hung-Wen Chao, Yu Zhang, Chan-Yuan Hu, QiXin Xu, Quan Gan, Ao Chen, Gen-Sheng Gao

Proceedings Volume 11328, 113281A (2020) https://doi.org/10.1117/12.2551670

KEYWORDS: Source mask optimization, Design for manufacturing, Manufacturing, Extreme ultraviolet lithography, Design for manufacturability, Optical lithography, Image processing, Neptune, Adaptive optics, Critical dimension metrology

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Proceedings Article | 20 March 2020 Paper

The improvement of measurement accuracy of SADP pitch walking issue

Pei Liu, Cheng-Zhang Wu, Hung-Wen Chao, Wenzhan Zhou, Yu Zhang, Chan-Yuan Hu, Yujie Xu, Jhen-Cyuan Li, Yen-Chan Chiu, Chun-Han Liu, Ran-Fu Yang, Chi-Hung Wang

Proceedings Volume 11325, 113252Z (2020) https://doi.org/10.1117/12.2552057

KEYWORDS: Transmission electron microscopy, Calibration, Semiconducting wafers, Electron microscopes, Fin field effect transistors, Image filtering, Scanning electron microscopy, Etching, Image quality, Integrated circuits, Deep ultraviolet, 193nm lithography, Electro optical systems calibration, Precision measurement, Accuracy assessment

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