Dr. Kent H. Nakagawa Profile

Dr. Kent H. Nakagawa

Senior Member of Technical Staff

SPIE Involvement:

Conference Program Committee | Author

Publications (21)

Proceedings Article | 20 September 2020 Presentation + Paper

Translating IC-centric photomask manufacturing to photonics-centric applications: Linking photomask processes to photonics waveguide performance

Kent Nakagawa, Nicholas Fahrenkopf

Proceedings Volume 11518, 115180S (2020) https://doi.org/10.1117/12.2572935

KEYWORDS: Photomasks, Manufacturing, Waveguides, Photonics, Metrology, Signal attenuation, Silicon photonics, Clouds, Copper, Vertical cavity surface emitting lasers

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Proceedings Article | 3 October 2018 Presentation + Paper

Photomask manufacturability and pattern fidelity for curvilinear structures

Richard Gladhill, Kent Nakagawa

Proceedings Volume 10810, 108100Q (2018) https://doi.org/10.1117/12.2502055

KEYWORDS: Photomasks, Computer aided design, Lithography, Databases, Printing, Manufacturing, Image segmentation, Raster graphics, Data modeling, Electron beams

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Proceedings Article | 17 October 2014 Paper

14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 9231, 92310I (2014) https://doi.org/10.1117/12.2066483

KEYWORDS: Photomasks, 3D modeling, Semiconducting wafers, Optical proximity correction, Data modeling, Calibration, Manufacturing, Photoresist materials, Metrology, Refractive index

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SPIE Journal Paper | 2 December 2013

Impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Timothy Lin, Steffen Schulze, Peter Buck, Franklin Kalk, Kent Nakagawa, GuoXiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

JM3, Vol. 13, Issue 01, 011004, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011004

KEYWORDS: Photomasks, Semiconducting wafers, 3D modeling, Optical proximity correction, Critical dimension metrology, Calibration, Photoresist materials, Computational lithography, Data modeling, Mathematical modeling

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Proceedings Article | 10 September 2013 Paper

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

John Sturtevant, Edita Tejnil, Peter Buck, Steffen Schulze, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 8880, 88800F (2013) https://doi.org/10.1117/12.2030733

KEYWORDS: Photomasks, Semiconducting wafers, 3D modeling, Optical proximity correction, Calibration, Photoresist materials, Critical dimension metrology, Manufacturing, Data modeling, Mathematical modeling

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Proceedings Article | 12 April 2013 Paper

The impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Tim Lin, Steffen Schultze, Peter Buck, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 8683, 868307 (2013) https://doi.org/10.1117/12.2013748

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, 3D modeling, Calibration, Critical dimension metrology, Manufacturing, Process modeling, Data modeling, Computational lithography

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Proceedings Article | 27 May 2009 Paper

Mask contribution on CD and OVL errors budgets for double patterning lithography

I. Servin, C. Lapeyre, S. Barnola, B. Connolly, R. Ploss, K. Nakagawa, P. Buck, M. McCallum

Proceedings Volume 7470, 747009 (2009) https://doi.org/10.1117/12.835171

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Reticles, Double patterning technology, Pellicles, Lithography, Image registration, Optical alignment, Scanners

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Proceedings Article | 12 May 2005 Paper

A novel mask-based approach to improve low-k1 corner and angle definition in alternating-aperture phase-shift mask structures

Kent Nakagawa, David Siefers, Susan MacDonald, Peter Buck

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.597617

KEYWORDS: Photomasks, Semiconducting wafers, Magnetism, Neck, Manufacturing, Scanning electron microscopy, Phase shifts, Optical proximity correction, Quartz, Distortion

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Proceedings Article | 2 June 2004 Paper

OASIS: progress on implementing the new stream format for containing data size explosion

Steffen Schulze, Kent Nakagawa, Peter Buck

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568027

KEYWORDS: Optical proximity correction, Information operations, Manufacturing, Integrated circuits, Data conversion, Data processing, Seaborgium, Photomasks, Databases, Beam shaping

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Proceedings Article | 28 May 2004 Paper

Through pitch intensity balancing and phase error analysis of 193-nm alternating phase shift masks

Kent Nakagawa, Gregory Hughes, Keuntaek Park, Peter Buck

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535956

KEYWORDS: Photomasks, Etching, Phase shifts, Wet etching, Error analysis, Manufacturing, Mask making, Lithography, Quartz, 193nm lithography

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Proceedings Article | 28 May 2004 Paper

Study of OPC for AAPSM reticles using various mask fabrication techniques

Gregory Hughes, Denny Kamaruddin, Kent Nakagawa, Susan MacDonald, Bill Wilkinson, Craig West, Keuntaek Park

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536138

KEYWORDS: Photomasks, Semiconducting wafers, Data modeling, Optical proximity correction, Etching, Mask making, Photoemission spectroscopy, Image analysis, Chromium, Reticles

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Proceedings Article | 17 December 2003 Paper

OASIS vs. GDSII stream format efficiency

Alfred Reich, Kent Nakagawa, Robert Boone

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518271

KEYWORDS: Digital signal processing, Databases, Product engineering, Computer programming, Semiconductors, Photomasks, Photomask technology, Computer programming languages, Data storage

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Proceedings Article | 10 July 2003 Paper

New stream format: progress report on containing data size explosion

Patrick LaCour, Alfred Reich, Kent Nakagawa, Steffen Schulze, Laurence Grodd

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485260

KEYWORDS: Photomasks, Manufacturing, Inspection, Integrated circuits, Data storage, Binary data, Design for manufacturability, Visualization, Mask making, Integrated circuit design

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Proceedings Article | 27 December 2002 Paper

Advanced write tool effects on 100-nm node OPC

Peter Buck, Kent Green, Kent Ibsen, Kent Nakagawa, Dongsung Hong, Prakash Krishnan, Dianna Coburn

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467761

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Deep ultraviolet, Image processing, Electron beam lithography, Printing, Scanning electron microscopy, Manufacturing

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Proceedings Article | 14 September 2001 Paper

Binary halftone chromeless PSM technology for quarter-lambda optical lithography

J. Fung Chen, John Petersen, Robert Socha, Thomas Laidig, Kurt Wampler, Kent Nakagawa, Greg Hughes, Susan MacDonald, Waiman Ng

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435751

KEYWORDS: Halftones, Binary data, Optical proximity correction, Photomasks, Reticles, Scanning electron microscopy, Manufacturing, Printing, Mask making, Lithography

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Proceedings Article | 5 July 2000 Paper

Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study

Kent Nakagawa, Uwe Hollerbach, J. Fung Chen

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388999

KEYWORDS: Optical proximity correction, Photomasks, Logic, Lithographic illumination, Lens design, Lithography, Critical dimension metrology, Diffractive optical elements, Fiber optic illuminators, Electroluminescence

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Proceedings Article | 30 December 1999 Paper

Practical technology path to sub-0.10-um process generations via enhanced optical lithography

J. Fung Chen, Thomas Laidig, Kurt Wampler, Roger Caldwell, Kent Nakagawa, Armin Liebchen

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373297

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Resolution enhancement technologies, Scanning electron microscopy, Optical lithography, Printing, Binary data, Diffraction, Semiconducting wafers

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Proceedings Article | 30 December 1999 Paper

CD error sensitivity to "sub-killer" defects at k1 near 0.4: II

Kent Nakagawa, J. Fung Chen, Robert Socha, Mircea Dusa, Thomas Laidig, Kurt Wampler, Roger Caldwell, Douglas Van Den Broeke

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373382

KEYWORDS: Reticles, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Photomasks, Defect detection, Scattering, Inspection, Photoresist processing

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Proceedings Article | 25 August 1999 Paper

Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems

Kent Nakagawa, J. Fung Chen, Robert Socha, Thomas Laidig, Kurt Wampler, Douglas Van Den Broeke, Mircea Dusa, Roger Caldwell

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360237

KEYWORDS: Halftones, Reticles, Semiconducting wafers, Inspection, Optical proximity correction, Scanning electron microscopy, Teeth, Control systems, Manufacturing, Semiconductors

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Proceedings Article | 14 June 1999 Paper

CD error sensitivity to "sub-killer" defects at k1 near 0.4

J. Fung Chen, Nathan Diachun, Kent Nakagawa, Robert Socha, Mircea Dusa, Thomas Laidig, Kurt Wampler, Roger Caldwell, Douglas Van Den Broeke

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350858

KEYWORDS: Reticles, Optical proximity correction, Critical dimension metrology, Scanning electron microscopy, Semiconducting wafers, Cadmium, Scattering, Photoresist processing, Silicon, Defect inspection

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Proceedings Article | 23 April 1999 Paper

Manufacturing an advanced process characterization reticle incorporating halftone biasing

Kent Nakagawa, Douglas Van Den Broeke, J. Fung Chen, Thomas Laidig, Kurt Wampler, Roger Caldwell

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346215

KEYWORDS: Halftones, Reticles, Optical proximity correction, Inspection, Semiconducting wafers, Scanning electron microscopy, Manufacturing, Teeth, Scattering, Semiconductors

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As the semiconductor roadmap continues to require imaging of smaller feature son wafers, we continue to explore new approaches in OPC strategies to extend the lifespan of existing technology. In this paper, we study a new OPC technology, called halftone biasing, and its application on an OPC characterization reticle, designed by MicroUnity Systems Engineering, Inc. The RTP9 test reticle is the latest in a series of 'LineSweeper' characterization reticles. Each reticle contains a wide range of line width sand pitches, each with several alternative OPC treatments, including references cases, scattering bars, and fine biasing. One of RTP9's design requirements was to support very fine, incremental biases for densely-pitched lines. Ordinarily, this would dictate a reduced address unit and with it the costly penalty of a square-law increase in e- beam write time. RTP9 incorporates a new OPC strategy, called halftone biasing, which has been proposed to address this problem. Taking advantage of optical reduction printing, this technique applies a sub-resolution halftone screen to the edges of figures to accomplish fine biasing equivalent to using an address unit one-fourth of the size of the actual e-beam writing grid. The resulting edge structure has some of the characteristics of aggressive OPC structures, but can be used in areas where traditional scattering bars cannot be placed. The trade-off between the faster write times achieved and the inflation of pattern file size is examined. The manufacturability and inspectability of halftone-biased lines on the RTP9 test reticle are explored. Pattern fidelity is examined using both optical and SEM tools. Printed 0.18 micrometers DUV resist line edge profiles are compared for both halftone and non- halftone feature edges. The CD uniformity of the OPC features, and result of die-to-database inspection are reported. The application of halftone biasing to real circuits, including the impact of data volume and saved write time, is also discussed.

Showing 5 of 21 publications

Conference Committee Involvement (7)

Photomask Technology 2024

29 September 2024 | Monterey, California, United States

Photomask Technology 2023

2 October 2023 | Monterey, California, United States

Photomask Technology 2022

26 September 2022 | Monterey, California, United States

Photomask Technology

27 September 2021 | Online Only, United States

Photomask Technology

21 September 2020 | Online Only, California, United States

Showing 5 of 7 Conference Committees

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